Technical Details

• Series:-
• Package:Tube
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:180mOhm @ 11A, 8V
• Vgs(th) (Max) @ Id:2.6V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 4.5 V
• Vgs (Max):±18V
• Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 480 V
• FET Feature:-
• Power Dissipation (Max):96W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220AB
• Package / Case:TO-220-3