Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:4.8V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:7.1 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:576 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):69W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:3-PQFN (8x8)
• Package / Case:3-PowerDFN