- Part NumberSIHB180N60E-GE3
- BrandVishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 19A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
In Stock: 1,020
Can ship immediately
Pricing:
- 1$3.54
- 10$3.17591
- 100$2.62409
- 500$2.1461
- 1,000$1.82741
- 2,500$1.74161
- 5,000$1.68033
Technical Details
- Series:E
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:180mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1085 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):156W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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