Technical Details

• Series:SD211
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:50mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):5V, 25V
• Rds On (Max) @ Id, Vgs:45Ohm @ 1mA, 10V
• Vgs(th) (Max) @ Id:1.5V @ 1µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):+25V, -300mV
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):300mW (Ta)
• Operating Temperature:-55°C ~ 125°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-72-4
• Package / Case:TO-206AF, TO-72-4 Metal Can