Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Voltage - Breakdown (V(BR)GSS):40 V
• Drain to Source Voltage (Vdss):40 V
• Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 20 V
• Current Drain (Id) - Max:-

• Voltage - Cutoff (VGS off) @ Id:500 mV @ 1 nA
• Input Capacitance (Ciss) (Max) @ Vds:14pF @ 20V
• Resistance - RDS(On):100 Ohms
• Power - Max:250 mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23 (TO-236AB)