Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Voltage - Breakdown (V(BR)GSS):40 V
• Drain to Source Voltage (Vdss):-
• Current - Drain (Idss) @ Vds (Vgs=0):200 µA @ 20 V
• Current Drain (Id) - Max:-

• Voltage - Cutoff (VGS off) @ Id:300 mV @ 10 nA
• Input Capacitance (Ciss) (Max) @ Vds:-
• Resistance - RDS(On):-
• Power - Max:350 mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23-3