Technical Details

• Series:TrenchMOS™
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2.5mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:2.15V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:34.7 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4.47 pF @ 12 V
• FET Feature:-
• Power Dissipation (Max):62.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK56, Power-SO8
• Package / Case:SC-100, SOT-669