- Part NumberNVMD6N03R2G
- BrandRochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionN-CHANNEL POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
In Stock: 4,915
Can ship immediately
Pricing:
- 1$0.28
Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:6A
- Rds On (Max) @ Id, Vgs:32mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:950pF @ 24V
- Power - Max:1.29W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
Related Products
Added to cart!
This item has been added to your cart.