Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:6.6A (Ta), 34A(Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:8.8 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):810mW (Ta), 22.3W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-WDFN (3.3x3.3)
• Package / Case:8-PowerWDFN