Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:25mA
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:-
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:3.5 pF @ 10 V
• FET Feature:Standard
• Power Dissipation (Max):200mW (Ta)
• Operating Temperature:-55°C ~ 125°C
• Mounting Type:Surface Mount
• Supplier Device Package:-
• Package / Case:SOT-103