Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:3.8A (Ta), 17.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4V, 5V
• Rds On (Max) @ Id, Vgs:45mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:3.76 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):1.14W (Ta), 22.3W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:I-PAK
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA