Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:4 N-Channel
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):700V
• Current - Continuous Drain (Id) @ 25°C:124A (Tc)
• Rds On (Max) @ Id, Vgs:19mOhm @ 40A, 20V

• Vgs(th) (Max) @ Id:2.4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs:215nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 700V
• Power - Max:365W (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:SP3F