Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1.2 kV
• Current - Continuous Drain (Id) @ 25°C:89A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:-
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D3Pak
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA