Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:59mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta)
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:6-MCPH
• Package / Case:6-SMD, Flat Leads