Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):25V
• Current - Continuous Drain (Id) @ 25°C:25A
• Rds On (Max) @ Id, Vgs:3.4mOhm @ 25A, 10V

• Vgs(th) (Max) @ Id:2.1V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1321pF @ 13V
• Power - Max:25W, 28W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerVDFN
• Supplier Device Package:Dual PQFN (5x4)