Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:6.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:30mOhm @ 6.5A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:1.31 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1.8W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:Micro8™
• Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)