Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):55V
• Current - Continuous Drain (Id) @ 25°C:4.7A
• Rds On (Max) @ Id, Vgs:50mOhm @ 4.7A, 10V

• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:740pF @ 25V
• Power - Max:2W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO