Technical Details

• Series:HTMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):55 V
• Current - Continuous Drain (Id) @ 25°C:-
• Drive Voltage (Max Rds On, Min Rds On):5V
• Rds On (Max) @ Id, Vgs:400mOhm @ 100mA, 5V
• Vgs(th) (Max) @ Id:2.4V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 5 V
• Vgs (Max):10V
• Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 28 V
• FET Feature:-
• Power Dissipation (Max):50W (Tj)
• Operating Temperature:-
• Mounting Type:Through Hole
• Supplier Device Package:-
• Package / Case:8-CDIP Exposed Pad