Technical Details

• Series:G3R™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:128A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:24mOhm @ 60A, 15V
• Vgs(th) (Max) @ Id:2.69V @ 15mA

• Gate Charge (Qg) (Max) @ Vgs:219 nC @ 15 V
• Vgs (Max):±15V
• Input Capacitance (Ciss) (Max) @ Vds:5873 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):542W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4
• Package / Case:TO-247-4