- Part NumberG2R1000MT17D
- BrandGeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSIC MOSFET N-CH 4A TO247-3
- CategoryTransistors - FETs, MOSFETs - Single
In Stock: 2,270
Can ship immediately
Pricing:
- 1$4.86
Technical Details
- Series:G2R™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1700 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):20V
- Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id:4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):+20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:139 pF @ 1000 V
- FET Feature:-
- Power Dissipation (Max):53W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247-3
- Package / Case:TO-247-3
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