Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:3A (Ta), 3.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):0.9V, 4.5V
• Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 0.9V
• Vgs(th) (Max) @ Id:650mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
• Vgs (Max):-6V
• Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):820mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:U-WLB1010-4
• Package / Case:4-UFBGA, WLBGA