Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Drain
• FET Feature:Logic Level Gate, 2.5V Drive
• Drain to Source Voltage (Vdss):24V
• Current - Continuous Drain (Id) @ 25°C:6A (Ta)
• Rds On (Max) @ Id, Vgs:20mOhm @ 3A, 4.5V

• Vgs(th) (Max) @ Id:1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:900mW
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:6-CPH