Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
• Rds On (Max) @ Id, Vgs:8Ohm @ 10mA, 4V
• Vgs(th) (Max) @ Id:1.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:0.66 nC @ 4.5 V
• Vgs (Max):10V
• Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 3 V
• FET Feature:-
• Power Dissipation (Max):100mW (Ta)
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-883
• Package / Case:SC-101, SOT-883