Technical Details

• Series:-
• Package:Box
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V
• Current - Continuous Drain (Id) @ 25°C:450A
• Rds On (Max) @ Id, Vgs:3.7mOhm @ 450A, 15V

• Vgs(th) (Max) @ Id:3.6V @ 132mA
• Gate Charge (Qg) (Max) @ Vgs:1330nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds:38000pF @ 800V
• Power - Max:850W
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module