- Part NumberBSO615NGHUMA1
- BrandIR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 60V 2.6A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Arrays
In Stock: 2,184
Can ship immediately
Pricing:
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Technical Details
- Series:SIPMOS®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:2.6A
- Rds On (Max) @ Id, Vgs:150mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id:2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:380pF @ 25V
- Power - Max:2W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:PG-DSO-8
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