Technical Details

• Series:SIPMOS®
• Package:Bulk
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:Standard
• Drain to Source Voltage (Vdss):60V
• Current - Continuous Drain (Id) @ 25°C:3A (Ta), 2A (Ta)
• Rds On (Max) @ Id, Vgs:120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V

• Vgs(th) (Max) @ Id:4V @ 20µA, 4V @ 450µA
• Gate Charge (Qg) (Max) @ Vgs:15.5nC, 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:340pF, 400pF @ 25V
• Power - Max:2W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:PG-DSO-8