Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:-
• Vgs(th) (Max) @ Id:5.6V @ 50mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):+22V, -4V
• Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):880W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:Module
• Package / Case:Module