Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:182mOhm @ 12.5A, 15V
• Vgs(th) (Max) @ Id:7V @ 2.5mA

• Gate Charge (Qg) (Max) @ Vgs:57 nC @ 15 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):85W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-3PF
• Package / Case:TO-3P-3 Full Pack