Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:1.5A
• Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V

• Vgs(th) (Max) @ Id:1.2V @ 3.7µA
• Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:143pF @ 10V
• Power - Max:500mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:PG-TSOP-6-6