Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
• Rds On (Max) @ Id, Vgs:90mOhm @ 2.2A, 4.5V

• Vgs(th) (Max) @ Id:700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:610pF @ 15V
• Power - Max:2W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO