Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:400mOhm @ 430mA, 4.5V
• Vgs(th) (Max) @ Id:680mV @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 9.6 V
• FET Feature:-
• Power Dissipation (Max):417mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB (SOT23)
• Package / Case:TO-236-3, SC-59, SOT-23-3