Technical Details

• Series:Automotive, AEC-Q101, HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:3.3mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id:3.9V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3174 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):4.3W (Ta), 94W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TDSON-8-10
• Package / Case:8-PowerVDFN