Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N Channel (Phase Leg)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C:50A (Tc)
• Rds On (Max) @ Id, Vgs:60mOhm @ 50A, 20V

• Vgs(th) (Max) @ Id:2.3V @ 2.5mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs:190nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds:3080pF @ 1000V
• Power - Max:350W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP1
• Supplier Device Package:SP1