- Part NumberAPTM100VDA35T3G
- BrandMicrosemi
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 1000V 22A SP3
- CategoryTransistors - FETs, MOSFETs - Arrays
In Stock: 3,170
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Technical Details
- Series:POWER MOS 7®
- Package:Bulk
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C:22A
- Rds On (Max) @ Id, Vgs:420mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:5200pF @ 25V
- Power - Max:390W
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:SP3
- Supplier Device Package:SP3
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