Technical Details

• Series:Automotive, AEC-Q101
• Package:Box
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:640A (Tc)
• Rds On (Max) @ Id, Vgs:2.97mOhm @ 480A, 15V

• Vgs(th) (Max) @ Id:3.6V @ 160mA
• Gate Charge (Qg) (Max) @ Vgs:15V
• Input Capacitance (Ciss) (Max) @ Vds:800V
• Power - Max:-
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module