Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:28A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:5mOhm @ 20A, 4.5V
• Vgs(th) (Max) @ Id:900mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:100 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:5626 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):6.2W (Ta), 83W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-DFN-EP (3.3x3.3)
• Package / Case:8-PowerWDFN