Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):6V, 20V
• Rds On (Max) @ Id, Vgs:11mOhm @ 12A, 20V
• Vgs(th) (Max) @ Id:3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):3.1W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOIC
• Package / Case:8-SOIC (0.154", 3.90mm Width)