Technical Details

• Series:HiPerFET™
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):200V
• Current - Continuous Drain (Id) @ 25°C:84A
• Rds On (Max) @ Id, Vgs:25mOhm @ 500mA, 10V

• Vgs(th) (Max) @ Id:4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs:450nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:15000pF @ 25V
• Power - Max:370W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Y4-M6
• Supplier Device Package:Y4-M6