Technical Details

• Series:Gen-III
• Package:Tube
• Part Status:Active
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):650 V
• Current - Average Rectified (Io):10A (DC)
• Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:60 µA @ 650 V
• Capacitance @ Vr, F:327pF @ 1V, 1MHz
• Mounting Type:Through Hole
• Package / Case:TO-220-2
• Supplier Device Package:TO-220-2
• Operating Temperature - Junction:-55°C ~ 175°C