Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Cascode SiCJFET)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):12V
• Rds On (Max) @ Id, Vgs:42mOhm @ 20A, 12V
• Vgs(th) (Max) @ Id:6V @ 10mA

• Gate Charge (Qg) (Max) @ Vgs:43 nC @ 12 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):179W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-DFN (8x8)
• Package / Case:4-PowerTSFN