Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Cascode SiCJFET)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:18.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):12V
• Rds On (Max) @ Id, Vgs:180mOhm @ 5A, 12V
• Vgs(th) (Max) @ Id:5.5V @ 10mA

• Gate Charge (Qg) (Max) @ Vgs:25.7 nC @ 12 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:738 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):166.7W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4
• Package / Case:TO-247-4