Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:GaNFET (Cascode Gallium Nitride FET)
• Drain to Source Voltage (Vdss):900 V
• Current - Continuous Drain (Id) @ 25°C:34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:63mOhm @ 22A, 10V
• Vgs(th) (Max) @ Id:4.4V @ 700µA

• Gate Charge (Qg) (Max) @ Vgs:17.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 600 V
• FET Feature:-
• Power Dissipation (Max):119W (Tc)
• Operating Temperature:-55°C ~ 150°C
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3