Technical Details

• Series:STripFET™ II
• Package:Tube
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Rds On (Max) @ Id, Vgs:9.5mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id:1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:30 nC @ 5 V
• Vgs (Max):±18V
• Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):100W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220AB
• Package / Case:TO-220-3