Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:2.1mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:6.38 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK
• Package / Case:SC-100, SOT-669