Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Diode Configuration:2 Independent
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):1200 V
• Current - Average Rectified (Io) (per Diode):100A (DC)
• Voltage - Forward (Vf) (Max) @ If:1.8 V @ 100 A

• Speed:No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:1 mA @ 1200 V
• Operating Temperature - Junction:-
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module