Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:650mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:940mOhm @ 300mA, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:1.37 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DFN1006B-3
• Package / Case:3-XFDFN