Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):1200 V
• Current - Average Rectified (Io):46A (DC)
• Voltage - Forward (Vf) (Max) @ If:1.75 V @ 30 A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:200 µA @ 1200 V
• Capacitance @ Vr, F:1740pf @ 1V, 100kHz
• Mounting Type:Surface Mount
• Package / Case:Die
• Supplier Device Package:Die
• Operating Temperature - Junction:-55°C ~ 175°C