Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max):100mA, 500mA
• Voltage - Collector Emitter Breakdown (Max):50V, 40V
• Resistor - Base (R1):10kOhms
• Resistor - Emitter Base (R2):10kOhms

• DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V, 200 @ 10mA, 2V
• Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA, 350mV @ 50mA, 500mA
• Current - Collector Cutoff (Max):1µA, 100nA (ICBO)
• Frequency - Transition:300MHz
• Power - Max:300mW
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:SOT-666