Technical Details

• Series:TrenchMOS™
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
• Vgs(th) (Max) @ Id:1.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:720 pC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DFN1006B-3
• Package / Case:SC-101, SOT-883