Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:10A
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:600Ohm @ 0A, 10V
• Vgs(th) (Max) @ Id:5V @ 10A

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:5 pF @ 10 V
• FET Feature:Standard
• Power Dissipation (Max):800mW (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-72
• Package / Case:TO-72-3